ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 UTV120 12 watts, 26.5 volts, class a uhf television - band iv & v general description the utv 120 is a common emitter transistor capable of providing 12 watts peak, class a, rf output power over the band 470 - 860 mhz. the transistor includes double input prematching for full broadband capability. gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. case outline 55jt, style 2 absolute maximum ratings maximum power dissipation @ 25 c 80 watts o maximum voltage and current bvces collector to emitter voltage 45 volts bvceo collector to emitter voltage 28 volts bvebo emitter to base voltage 4 volts ic collector current 3.5 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg imd 1 vswr 1 power out - pk sync power input power gain intermodulation distortion load mismatch tolerance f = 470 - 860 mhz vcc = 26.5 volts ic = 1.7 amps pref = 12 watts f = 860 mhz 12 8.9 9.5 1.55 -52 3:1 watts watts db db lvceo 2 bvces 2 bvebo 2 h fe 2 cob 2 q jc collector to emitter breakdown collector to base breakdown emitter to base breakdown current gain output capacitance thermal resistance ic = 65 ma ic = 25 ma ie = 10 ma vce = 5 v, 500 ma vcb = 26 v, f = 1 mhz tc = 25 c o 28 45 4 10 23 1.6 volts volts volts pf c/w o note 1: f1=860 mhz, f2=863.5 mhz, f3=864.5 mhz european test method, vision = - 8db, sideband= - 16db, sound = -7 db note 2: per side initial issue june, 1994
ghz technol ogy inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead v illage drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 UTV120
utv-120 capacitors c1,c6=4.7 pf atc series a c2,c3,c20,c21=33 pf atc series a c4,c9=1.2-3.5 pf film diel. trimmer c5,c7,c11,c12=0.01 mf, 50v tantalum c8,c15,c17,c25=1 mf, 50 v tantalum c10,c16,c27,c12=0.1 mf 50 v disc ceramic c13=0.6-6 pf piston trimmer c19=0.35-3.5 pf piston trimmer c18,c24,c14,c26=10 mf, 50 v c28,c30=0.001 mf, 50 v disc ceramic c31=100 mf, 50 v electrolytic resistors r1=10 ohm, 1/2 w carbon r2,r6=500 ohm potentiometer r3,r7=4.7k ohm, 3w, 1% carbon r4,r8=1 ohm, 3w, 1% carbon film r5,r9=47 ohm, 1/4w carbon film diodes cr1,cr2=in4148 transistors q1=ghz utv-120 q2,q3=mje172 transformers t1,t2,t3,t4=50 ohm semi-rigid coax cable (0.056" x 1.1") soldered to 0.035" x 1.1" microstrip inductors l1,l2=0.46 microhenry molded l3,l4=1 turn #18 magnet wire on a 0.325" form microstriplines l3,l4=0.075" x 0.65" l5,l6=0.120" x 0.31" l7,l8=0.120" x 1.33" bias circuit 50 ohm rf in t2 t1 c1 c2 c3 c5 c16 vbe 2 c24 c8 l1 + + l3 l5 c4 c6 c9 q1 l6 l5 l2 c7 c10 c25 c26 ++ vbe 1 c13 c19 c20 c21 l7 l8 l3 vce 1 c5 c28 + + c8 c14 c15 l4 c12 + + c17 c18 c29 c30 vce 2 t3 t4 c22 r1 c23 50 ohm rf out r2 c31 + r4 r6 r8 vce 2 q3 r9 r7 cr2 vce 1 q2 r5 r3 cr1 vbe 1 vbe 2 august 1996
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